SK hynix将于IMW 2022展示3DVXP结构

埃律西昂

来源：SK hynix研究
原英文标题：《Structural and Device Considerations for Vertical Cross Point Memory with Single-stack memory》

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Since the first commercialization of the 3D XPoint (3DXP), it has gained increasing attention as a new class of memory between DRAM and NAND based on its high capacity, low latency, and byte-addressability. The 3DXP product has provided high capacity with its 4F2 footprint and 2z nm scale feature size. However, it is expected that further scaling of 3DXP will face limitations in either vertical deck-by-deck stacking or lateral shrink due to process and cost issues.
自3D XPoint（3DXP）首次商业化以来，它因其高容量，低延迟和字节可寻址性，作为DRAM和NAND之间的新型内存而受到越来越多的关注。3DXP 产品以其 4F2 基底面和 2z nm 尺度的特征尺寸提供了高容量。然而，由于工艺和成本问题，预计3DXP的进一步扩展将面临垂直逐层堆叠或横向收缩的限制。

At the 2022 IMW, we will propose the 3D structure of the 3D vertical cross point memory (3DVXP) as the next-generation byte-addressable storage class memory (SCM). We will demonstrate the advantage and the feasibility of the selectable memory, based on memory-selector duality, for the application of the 3DVXP. In our paper, quantitative analysis of device operation was performed to understand the effects of parasitic resistance, capacitance, and cell density. Also discussed is the most important technology elements such as the ‘poly-Si vertical transistor’ and the requirement for the current drivability to satisfy 3DVXP operations. Furthermore, the challenges of 3DVXP are discussed as a further research topic.
在2022年的IMW上，我们将提出3D垂直交叉点存储器（3DVXP）的3D结构作为下一代字节可寻址存储类存储器（SCM）。我们将展示基于存储器选择器对偶性的可选存储器在3DVXP应用中的优势和可行性。在我们的论文中，对器件操作进行了定量分析，以了解寄生电阻，电容和电池密度的影响。还讨论了最重要的技术元素，例如“poly-Si垂直晶体管”以及满足3DVXP操作的电流驱动能力要求。此外，3DVXP的挑战作为进一步的研究课题进行了讨论。

We believe that the 3DVXP technology with an innovative 3D structure and cell stacks can potentially extend the roadmap of storage class memory further than the current scalability of the 3DXP technology.
我们相信，具有创新3D结构和单元堆栈的3DVXP技术可以比3DXP技术的当前可扩展性进一步扩展存储类内存的路线图。

埃律西昂

根据相关论文，这似乎是一种FE-RAM，铁电存储器。