来源： 英飞凌官网
原英文标题： <Infineon to acquire GaN Systems, strengthening its GaN portfolio and further reinforcing its global leadership in Power Systems>
Munich, Germany, and Ottawa, Canada – 02 March, 2023 – Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) and GaN Systems Inc. (“GaN Systems”) today announced that the companies have signed a definitive agreement under which Infineon will acquire GaN Systems for US$830 million. GaN Systems is a global technology leader in the development of GaN-based solutions for power conversion. The company is headquartered in Ottawa, Canada, and has more than 200 employees.
“GaN technology is paving the way for more energy-efficient and CO 2-saving solutions that support decarbonization. Adoption in applications like mobile charging, data center power supplies, residential solar inverters, and onboard chargers for electric vehicles is at the tipping point, leading to a dynamic market growth,” said Jochen Hanebeck, CEO of Infineon. “The planned acquisition of GaN Systems will significantly accelerate our GaN roadmap, based on unmatched R&D resources, application understanding and customer project pipeline. Following our strategy, the combination will further strengthen Infineon’s leadership in Power Systems through mastery of all relevant power technologies, be it on silicon, silicon carbide or gallium nitride.”
Jim Witham, CEO of GaN Systems, said: “The GaN Systems team is excited about teaming up with Infineon to create highly differentiating customer offerings, based on bringing together complementary strengths. With our joint expertise in providing superior solutions, we will optimally leverage the potential of GaN. Combining GaN Systems’ foundry corridors with Infineon’s in-house manufacturing capacity enables maximum growth capability to serve the accelerating adoption of GaN in a wide range of our target markets. I am very proud of what GaN Systems has accomplished so far and cannot wait to help write the next chapter together with Infineon. As an integrated device manufacturer with a broad technology capability, Infineon enables us to unleash our full potential.”
As a wide bandgap material, GaN offers customer value by higher power density, higher efficiency, and size reductions, especially at higher switching frequencies. These properties enable energy savings and smaller form factors, making GaN suited for a wide range of applications. By 2027, market analysts expect the GaN revenue for power applications to grow by 56% CAGR to approx. US$2 billion (source: Yole, Compound Semiconductor Market Monitor-Module I Q4 2022). As such, GaN is becoming a key material for power semiconductors, alongside silicon and silicon-carbide, and coupled with new topologies, such as Hybrid Flyback and multi-level implementations. In February 2022, Infineon announced doubling down on wide bandgap by investing more than €2 billion in a new frontend fab in Kulim, Malaysia, strengthening its market position. The first wafers will leave the fab in the second half of 2024, adding to Infineon’s existing wide bandgap manufacturing capacities in Villach, Austria.
The planned acquisition of GaN Systems in an all-cash transaction will be funded from existing liquidity. The transaction is subject to customary closing conditions, including regulatory approvals.
德国慕尼黑和加拿大渥太华--2023年3月2日--英飞凌科技股份公司（FSE: IFX / OTCQX: IFNNY）和GaN Systems公司（"GaN Systems"）今天宣布，两家公司已签署最终协议，英飞凌将以8.3亿美元收购GaN系统。氮化镓系统公司是开发基于氮化镓的电源转换解决方案的全球技术领导者。该公司总部位于加拿大渥太华，拥有200多名员工。
"氮化镓技术正在为支持去碳化的更高能效和节省二氧化碳的解决方案铺平道路。英飞凌首席执行官Jochen Hanebeck表示："在移动充电、数据中心电源、住宅太阳能逆变器和电动汽车车载充电器等应用中的应用正处于转折点，导致了市场的蓬勃发展。英飞凌首席执行官Jochen Hanebeck表示："基于无可比拟的研发资源、应用理解和客户项目管道，收购GaN Systems的计划将大大加快我们的GaN路线图。按照我们的战略，通过掌握所有相关的电源技术，无论是硅、碳化硅还是氮化镓，这一组合将进一步加强英飞凌在电源系统领域的领导地位。"
GaN Systems公司首席执行官Jim Witham说。"GaN Systems团队很高兴与英飞凌合作，在汇集互补优势的基础上，为客户提供高度差异化的产品。凭借我们在提供卓越解决方案方面的共同专长，我们将以最佳方式发挥GaN的潜力。将GaN Systems的代工走廊与英飞凌的内部制造能力相结合，可以实现最大的增长能力，以服务于GaN在我们广泛的目标市场中的加速应用。我为GaN Systems迄今为止所取得的成就感到非常自豪，并迫不及待地想与英飞凌一起谱写新的篇章。作为一家拥有广泛技术能力的集成器件制造商，英飞凌使我们能够充分释放我们的潜力。"
作为一种宽带隙材料，氮化镓通过更高的功率密度、更高的效率和更小的尺寸为客户提供价值，尤其是在更高的开关频率下。这些特性能够实现节能和更小的外形尺寸，使氮化镓适用于广泛的应用。到2027年，市场分析师预计，用于电力应用的GaN收入将以56%的年复合增长率增长到约20亿美元（来源：Yole，化合物半导体市场监测-模块I 2022年第四季度）。因此，氮化镓正在成为功率半导体的关键材料，与硅和碳化硅一起，并与新的拓扑结构相结合，如混合反激式和多电平实现。2022年2月，英飞凌宣布在宽带隙方面加倍努力，投资20多亿欧元在马来西亚Kulim建立新的前端工厂，加强其市场地位。第一批晶圆将于2024年下半年离开该工厂，加入英飞凌在奥地利维拉赫的现有宽带隙制造能力。
计划以全现金交易的方式收购GaN Systems，资金将来自现有的流动资金。该交易需满足常规的成交条件，包括监管部门的批准。 |
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发表于 2023-3-5 16:53
