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本帖最后由 testcb00 于 2022-8-20 22:24 编辑
买了4条三星64GB DDR3 1600Hz LRDIMM
AIDA64得出结果如下
我看之前的帖子别人E5-2670双路两个四通道能跑100GB/s
BIOS Auto是行1066 Hz
似是1066 Hz刷1600Hz的...
MemTest86 RAM information
MemTest86 V9.4 Pro Build: 1000
PassMark Software
www.passmark.com
Memory summary:
Number of RAM slots: 8
Number of RAM modules: 4
Number of RAM SPDs detected: 4
Total Physical Memory: 262133M
SPD Details:
--------------
SPD #: 1
==============
RAM Type: DDR3
Maximum Clock Speed (MHz): 800 (JEDEC)
Maximum Transfer Speed (MHz): DDR3-1600
Maximum Bandwidth (MB/s): PC3-12800
Memory Capacity (MB): 40960
Jedec Manufacture Name: Samsung
SPD Revision: 1.2
Registered: No
ECC: Yes
DIMM Slot #: 1
Manufactured: Week 51 of Year 2016
Module Part #: M386B8G70DE0-CK03
Module Revision: 0x0000
Module Serial #: 删除
Module Manufacturing Location: 0x01
# of Row Addressing Bits: 16
# of Column Addressing Bits: 11
# of Banks: 8
# of Ranks: 5
Device Width in Bits: 4
Bus Width in Bits: 64
Module Voltage: 1.5V
CAS Latencies Supported: 6 7 8 9 10 11
Timings @ Max Frequency (JEDEC): 11-11-11-28
Maximum Clock Speed (MHz): 800
Maximum Transfer Speed (MHz): DDR3-1600
Maximum Bandwidth (MB/s): PC3-12800
Minimum Clock Cycle Time, tCK (ns): 1.250
Minimum CAS Latency Time, tAA (ns): 13.125
Minimum RAS to CAS Delay, tRCD (ns): 13.125
Minimum Row Precharge Time, tRP (ns): 13.125
Minimum Active to Precharge Time, tRAS (ns): 35.000
Minimum Row Active to Row Active Delay, tRRD (ns): 6.000
Minimum Auto-Refresh to Active/Auto-Refresh Time, tRC (ns): 48.125
Minimum Auto-Refresh to Active/Auto-Refresh Command Period, tRFC (ns): 260.000
DDR3 Specific SPD Attributes
Write Recover Time, tWR (ns): 15.000
Internal Write to Read Command Delay, tWTR (ns): 7.500
Internal Read to Precharge Command Delay, tRTP (ns): 7.500
Minimum Four Activate Window Delay (ns): 30.000
RZQ / 6 Supported: Yes
RZQ / 7 Supported: Yes
DLL-Off Mode Supported: Yes
Maximum Operating Temperature Range (C): 0-95C
Refresh Rate at Extended Operating Temperature Range: 2X
Auto-Self Refresh Supported: No
On-die Thermal Sensor Readout Supported: No
Partial Array Self Refresh Supported: No
Thermal Sensor Present: Yes
Non-standard SDRAM Type: 00
Module Type: Reserved
Module Height (mm): -1 - 0
Module Thickness (mm): front -1-0 , back -1-0
Module Width (mm):
Reference Raw Card Used:
DRAM Manufacture: Samsung
SPD #: 2
==============
RAM Type: DDR3
Maximum Clock Speed (MHz): 800 (JEDEC)
Maximum Transfer Speed (MHz): DDR3-1600
Maximum Bandwidth (MB/s): PC3-12800
Memory Capacity (MB): 40960
Jedec Manufacture Name: Samsung
SPD Revision: 1.2
Registered: No
ECC: Yes
DIMM Slot #: 2
Manufactured: Week 51 of Year 2016
Module Part #: M386B8G70DE0-CK03
Module Revision: 0x0000
Module Serial #: 删除
Module Manufacturing Location: 0x01
# of Row Addressing Bits: 16
# of Column Addressing Bits: 11
# of Banks: 8
# of Ranks: 5
Device Width in Bits: 4
Bus Width in Bits: 64
Module Voltage: 1.5V
CAS Latencies Supported: 6 7 8 9 10 11
Timings @ Max Frequency (JEDEC): 11-11-11-28
Maximum Clock Speed (MHz): 800
Maximum Transfer Speed (MHz): DDR3-1600
Maximum Bandwidth (MB/s): PC3-12800
Minimum Clock Cycle Time, tCK (ns): 1.250
Minimum CAS Latency Time, tAA (ns): 13.125
Minimum RAS to CAS Delay, tRCD (ns): 13.125
Minimum Row Precharge Time, tRP (ns): 13.125
Minimum Active to Precharge Time, tRAS (ns): 35.000
Minimum Row Active to Row Active Delay, tRRD (ns): 6.000
Minimum Auto-Refresh to Active/Auto-Refresh Time, tRC (ns): 48.125
Minimum Auto-Refresh to Active/Auto-Refresh Command Period, tRFC (ns): 260.000
DDR3 Specific SPD Attributes
Write Recover Time, tWR (ns): 15.000
Internal Write to Read Command Delay, tWTR (ns): 7.500
Internal Read to Precharge Command Delay, tRTP (ns): 7.500
Minimum Four Activate Window Delay (ns): 30.000
RZQ / 6 Supported: Yes
RZQ / 7 Supported: Yes
DLL-Off Mode Supported: Yes
Maximum Operating Temperature Range (C): 0-95C
Refresh Rate at Extended Operating Temperature Range: 2X
Auto-Self Refresh Supported: No
On-die Thermal Sensor Readout Supported: No
Partial Array Self Refresh Supported: No
Thermal Sensor Present: Yes
Non-standard SDRAM Type: 00
Module Type: Reserved
Module Height (mm): -1 - 0
Module Thickness (mm): front -1-0 , back -1-0
Module Width (mm):
Reference Raw Card Used:
DRAM Manufacture: Samsung
SPD #: 3
==============
RAM Type: DDR3
Maximum Clock Speed (MHz): 800 (JEDEC)
Maximum Transfer Speed (MHz): DDR3-1600
Maximum Bandwidth (MB/s): PC3-12800
Memory Capacity (MB): 40960
Jedec Manufacture Name: Samsung
SPD Revision: 1.2
Registered: No
ECC: Yes
DIMM Slot #: 3
Manufactured: Week 50 of Year 2016
Module Part #: M386B8G70DE0-CK03
Module Revision: 0x0000
Module Serial #: 删除
Module Manufacturing Location: 0x01
# of Row Addressing Bits: 16
# of Column Addressing Bits: 11
# of Banks: 8
# of Ranks: 5
Device Width in Bits: 4
Bus Width in Bits: 64
Module Voltage: 1.5V
CAS Latencies Supported: 6 7 8 9 10 11
Timings @ Max Frequency (JEDEC): 11-11-11-28
Maximum Clock Speed (MHz): 800
Maximum Transfer Speed (MHz): DDR3-1600
Maximum Bandwidth (MB/s): PC3-12800
Minimum Clock Cycle Time, tCK (ns): 1.250
Minimum CAS Latency Time, tAA (ns): 13.125
Minimum RAS to CAS Delay, tRCD (ns): 13.125
Minimum Row Precharge Time, tRP (ns): 13.125
Minimum Active to Precharge Time, tRAS (ns): 35.000
Minimum Row Active to Row Active Delay, tRRD (ns): 6.000
Minimum Auto-Refresh to Active/Auto-Refresh Time, tRC (ns): 48.125
Minimum Auto-Refresh to Active/Auto-Refresh Command Period, tRFC (ns): 260.000
DDR3 Specific SPD Attributes
Write Recover Time, tWR (ns): 15.000
Internal Write to Read Command Delay, tWTR (ns): 7.500
Internal Read to Precharge Command Delay, tRTP (ns): 7.500
Minimum Four Activate Window Delay (ns): 30.000
RZQ / 6 Supported: Yes
RZQ / 7 Supported: Yes
DLL-Off Mode Supported: Yes
Maximum Operating Temperature Range (C): 0-95C
Refresh Rate at Extended Operating Temperature Range: 2X
Auto-Self Refresh Supported: No
On-die Thermal Sensor Readout Supported: No
Partial Array Self Refresh Supported: No
Thermal Sensor Present: Yes
Non-standard SDRAM Type: 00
Module Type: Reserved
Module Height (mm): -1 - 0
Module Thickness (mm): front -1-0 , back -1-0
Module Width (mm):
Reference Raw Card Used:
DRAM Manufacture: Samsung
SPD #: 4
==============
RAM Type: DDR3
Maximum Clock Speed (MHz): 800 (JEDEC)
Maximum Transfer Speed (MHz): DDR3-1600
Maximum Bandwidth (MB/s): PC3-12800
Memory Capacity (MB): 40960
Jedec Manufacture Name: Samsung
SPD Revision: 1.2
Registered: No
ECC: Yes
DIMM Slot #: 4
Manufactured: Week 51 of Year 2016
Module Part #: M386B8G70DE0-CK03
Module Revision: 0x0000
Module Serial #: 删除
Module Manufacturing Location: 0x01
# of Row Addressing Bits: 16
# of Column Addressing Bits: 11
# of Banks: 8
# of Ranks: 5
Device Width in Bits: 4
Bus Width in Bits: 64
Module Voltage: 1.5V
CAS Latencies Supported: 6 7 8 9 10 11
Timings @ Max Frequency (JEDEC): 11-11-11-28
Maximum Clock Speed (MHz): 800
Maximum Transfer Speed (MHz): DDR3-1600
Maximum Bandwidth (MB/s): PC3-12800
Minimum Clock Cycle Time, tCK (ns): 1.250
Minimum CAS Latency Time, tAA (ns): 13.125
Minimum RAS to CAS Delay, tRCD (ns): 13.125
Minimum Row Precharge Time, tRP (ns): 13.125
Minimum Active to Precharge Time, tRAS (ns): 35.000
Minimum Row Active to Row Active Delay, tRRD (ns): 6.000
Minimum Auto-Refresh to Active/Auto-Refresh Time, tRC (ns): 48.125
Minimum Auto-Refresh to Active/Auto-Refresh Command Period, tRFC (ns): 260.000
DDR3 Specific SPD Attributes
Write Recover Time, tWR (ns): 15.000
Internal Write to Read Command Delay, tWTR (ns): 7.500
Internal Read to Precharge Command Delay, tRTP (ns): 7.500
Minimum Four Activate Window Delay (ns): 30.000
RZQ / 6 Supported: Yes
RZQ / 7 Supported: Yes
DLL-Off Mode Supported: Yes
Maximum Operating Temperature Range (C): 0-95C
Refresh Rate at Extended Operating Temperature Range: 2X
Auto-Self Refresh Supported: No
On-die Thermal Sensor Readout Supported: No
Partial Array Self Refresh Supported: No
Thermal Sensor Present: Yes
Non-standard SDRAM Type: 00
Module Type: Reserved
Module Height (mm): -1 - 0
Module Thickness (mm): front -1-0 , back -1-0
Module Width (mm):
Reference Raw Card Used:
DRAM Manufacture: Samsung
SMBIOS Details:
--------------
DIMM #: 1
==============
Total Width: 72 bits
Data Width: 64 bits
Size: 65536 MB
Form Factor: DIMM
Device Set: 0
Device Locator: P1-DIMMA1
Bank Locator: P1-CH-A
Memory Type: DDR3
Type Detail: Synchronous
Speed: 1600 MT/s
Manufacturer: Samsung
Serial Number: 删除
Asset Tag: Unknown
Part Number: M386B8G70DE0-
Attributes: 00000002
Configured Memory Speed: 1600 MT/s
Minimum Voltage: N/A
Maximum Voltage: N/A
Configured Voltage: N/A
Memory Technology: Unknown
Memory Operating Mode Capability: Unknown
Firmware Version:
Module Manufacturer ID: N/A
Module Product ID: N/A
Memory Subsystem Controller Manufacturer ID: N/A
Memory Subsystem Controller Product ID: N/A
Non Volatile Size: N/A
Volatile Size: N/A
Cache Size: N/A
Logical Size: N/A
DIMM #: 2
==============
Empty slot
DIMM #: 3
==============
Total Width: 72 bits
Data Width: 64 bits
Size: 65536 MB
Form Factor: DIMM
Device Set: 0
Device Locator: P1-DIMMB1
Bank Locator: P1-CH-B
Memory Type: DDR3
Type Detail: Synchronous
Speed: 1600 MT/s
Manufacturer: Samsung
Serial Number: 删除
Asset Tag: Unknown
Part Number: M386B8G70DE0-
Attributes: 00000002
Configured Memory Speed: 1600 MT/s
Minimum Voltage: N/A
Maximum Voltage: N/A
Configured Voltage: N/A
Memory Technology: Unknown
Memory Operating Mode Capability: Unknown
Firmware Version:
Module Manufacturer ID: N/A
Module Product ID: N/A
Memory Subsystem Controller Manufacturer ID: N/A
Memory Subsystem Controller Product ID: N/A
Non Volatile Size: N/A
Volatile Size: N/A
Cache Size: N/A
Logical Size: N/A
DIMM #: 4
==============
Empty slot
DIMM #: 5
==============
Total Width: 72 bits
Data Width: 64 bits
Size: 65536 MB
Form Factor: DIMM
Device Set: 0
Device Locator: P1-DIMMC1
Bank Locator: P1-CH-C
Memory Type: DDR3
Type Detail: Synchronous
Speed: 1600 MT/s
Manufacturer: Samsung
Serial Number: 删除
Asset Tag: Unknown
Part Number: M386B8G70DE0-
Attributes: 00000002
Configured Memory Speed: 1600 MT/s
Minimum Voltage: N/A
Maximum Voltage: N/A
Configured Voltage: N/A
Memory Technology: Unknown
Memory Operating Mode Capability: Unknown
Firmware Version:
Module Manufacturer ID: N/A
Module Product ID: N/A
Memory Subsystem Controller Manufacturer ID: N/A
Memory Subsystem Controller Product ID: N/A
Non Volatile Size: N/A
Volatile Size: N/A
Cache Size: N/A
Logical Size: N/A
DIMM #: 6
==============
Empty slot
DIMM #: 7
==============
Total Width: 72 bits
Data Width: 64 bits
Size: 65536 MB
Form Factor: DIMM
Device Set: 0
Device Locator: P1-DIMMD1
Bank Locator: P1-CH-D
Memory Type: DDR3
Type Detail: Synchronous
Speed: 1600 MT/s
Manufacturer: Samsung
Serial Number: 删除
Asset Tag: Unknown
Part Number: M386B8G70DE0-
Attributes: 00000002
Configured Memory Speed: 1600 MT/s
Minimum Voltage: N/A
Maximum Voltage: N/A
Configured Voltage: N/A
Memory Technology: Unknown
Memory Operating Mode Capability: Unknown
Firmware Version:
Module Manufacturer ID: N/A
Module Product ID: N/A
Memory Subsystem Controller Manufacturer ID: N/A
Memory Subsystem Controller Product ID: N/A
Non Volatile Size: N/A
Volatile Size: N/A
Cache Size: N/A
Logical Size: N/A
DIMM #: 8
==============
Empty slot
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310112100042806
发表于 2022-8-20 22:21
